Progress in three‐terminal heterojunction bipolar transistor solar cells

Autor: Elisa Antolín, Marius H. Zehender, Simon A. Svatek, Myles A. Steiner, Mario Martínez, Iván García, Pablo García‐Linares, Emily L. Warren, Adele C. Tamboli, Antonio Martí
Rok vydání: 2022
Předmět:
Zdroj: Progress in Photovoltaics: Research and Applications, ISSN 1099-159X, 2022-01-26
Archivo Digital UPM
Universidad Politécnica de Madrid
ISSN: 1099-159X
1062-7995
DOI: 10.1002/pip.3536
Popis: Conventional solar cells, including multijunction solar cells, are based on pn junctions as building blocks. In contrast, the three-terminal heterojunction bipolar transistor solar cell (3T-HBTSC) explores the use of a bipolar transistor structure to build a solar cell. The limiting efficiency of this transistor structure equals that of a double-junction solar cell. However, since the 3T-HBTSC does not require tunnel junctions, its minimal structure has only three semiconductor layers, while the minimal structure of a double junction solar cell has six. This work reviews the operation principles of this solar cell and the steps carried out towards its practical implementation. Experimental results on a GaInP/GaAs HBTSC prototype with bottom interdigitated contacts are presented.
Databáze: OpenAIRE