Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
| Autor: | Thomas Detzel, Giovanni Verzellesi, Gianmauro Pozzovivo, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Gilberto Curatola, L. Morassi, S. Lavanga, Oliver Häberlen |
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| Rok vydání: | 2014 |
| Předmět: |
GaN HEMTs
Fabrication Materials science chemistry.chemical_element Capacitance Buffer (optical fiber) GaN HFETs GaN MOSHEMTs carbon doping current collapse Electrical and Electronic Engineering HEMT business.industry Doping Wide-bandgap semiconductor Gallium Nitride Charge Trapping Metal Insulator Semiconductor Acceptor Electronic Optical and Magnetic Materials Power (physics) chemistry Optoelectronics business Carbon |
| Zdroj: | IEEE Electron Device Letters. 35:443-445 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2014.2304680 |
| Popis: | Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic RDS,on increase can accurately be reproduced by numerical device simulations that assume the CN-CGa autocompensation model as carbon doping mechanism. Current-collapse effects much larger than experimentally observed are instead predicted by simulations if C doping is accounted by dominant acceptor states. This suggests that buffer growth conditions favoring CN-CGa autocompensation can allow for the fabrication of power AlGaN/GaN HEMTs with reduced current-collapse effects. The drain-source capacitance of these devices is found to be a sensitive function of the C doping model, suggesting that its monitoring can be adopted as a fast technique to assess buffer compensation properties. |
| Databáze: | OpenAIRE |
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