Photoinduced Memory with Hybrid Integration of an Organic Fullerene Derivative and an Inorganic Nanogap-Embedded Field-Effect Transistor for Low-Voltage Operation
| Autor: | Seunghyup Yoo, Hoyeon Kim, Yang-Kyu Choi, Sung-Jin Choi, Jin-Woo Han, Sungho Kim, Chung-Jin Kim |
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| Rok vydání: | 2011 |
| Předmět: |
Silicon
Materials science Fullerene Transistors Electronic Mechanical Engineering chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Dielectric Nanostructures Hysteresis Electricity CMOS chemistry Hardware_GENERAL Mechanics of Materials Hardware_INTEGRATEDCIRCUITS General Materials Science Field-effect transistor Fullerenes Low voltage Voltage |
| Zdroj: | Advanced Materials. 23:3326-3331 |
| ISSN: | 0935-9648 |
| DOI: | 10.1002/adma.201101034 |
| Popis: | 4–6 ] However, these optoelectronic approaches based on the simple functionalization or the homogeneous integration of organic channel/organic-based gate dielectrics still show intrinsic problems in memory functionality, such as unstable hysteresis, which make the data states undistinguishable and the operation voltage too high. To be free from the aforementioned inherent limitations for low-voltage operation and the intrinsic problems stemming from the homogeneous integration of the organic material alone, it is essential to develop a novel operation method and hybrid integra-tion based on the adoption of a new material such as a photoac-tive organic on a commercially matured and reliable silicon-based complementary metal oxide semiconductor (CMOS). On the other hand, although commercialized silicon-based CMOS devices pro-vide high mobility and high-quality gate dielectrics accompanied with matured mass-production technology, hybrid integration is hampered by the high-temperature processes of CMOS, which can result in the thermal instability of organic materials. Herein, we demonstrate a photoinduced memory for low-voltage operation, achieved by embedding an organic fullerene derivative, [6,6]-phenyl-C |
| Databáze: | OpenAIRE |
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