Time-Performance Design and Study of Ultra-Wideband Amplifiers for SiPM
| Autor: | A.S. Brogna, F. D'Andria, X. Selmani, Cristoforo Marzocca, Q. Weitzel |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Computer science
Ultra-wideband Analogue electronic circuits Front-end electronics for detector readout Photon detectors for UV visible and IR photons (solid-state) (PIN diodes APDs Si-PMTs G-APDs CCDs EBCCDs EMCCDs CMOS imagers etc) Photon detectors for UV visible and IR photons (vacuum) (photomultipliers HPDs others) visible and IR photons (vacuum) (photomultipliers Noise figure 01 natural sciences 030218 nuclear medicine & medical imaging law.invention 03 medical and health sciences 0302 clinical medicine Silicon photomultiplier law 0103 physical sciences Electronic engineering APDs visible and IR photons (solid-state) (PIN diodes Gain stage CMOS imagers Instrumentation Photon detectors for UV Mathematical Physics Monolithic microwave integrated circuit etc) EBCCDs 010308 nuclear & particles physics Amplifier Transistor JFET Si-PMTs CCDs EMCCDs HPDs G-APDs others) |
| Popis: | The recent advances in SiPM technology and the high demanding performance required by the current applications, especially in the field of time-of-flight estimation, call for a new approach in the design of the front-end amplifier to preserve the correct timing of the signals. Currently, SiPM manufacturers are offering devices with dedicated pins for fast-time outputs and recommending front-end amplifiers based on commercial devices for microwave and radio-frequency. We present in this paper our experience in designing customized wide-band amplifier front-ends for SiPM signals in high-resolution timing applications. The design consists of two stages, the first based on a low noise device (typically a JFET/MOSFET, but we have tried heterojunction transistors as well) to achieve the minimum noise figure and the second based on a MMIC used as a gain stage to boost the signal and maximize the power transfer to the output. The design procedure relies on a combination of the traditional approach of circuit simulation integrated with techniques involving the use of S-parameters, typical of RF applications. Two versions of the amplifier have been laid out and assembled and are currently under test. We present the preliminary characterization results, which demonstrates the effectiveness of the proposed design approach. |
| Databáze: | OpenAIRE |
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