Coupling Effects in InGaP/InGaAs/Ge Triple Junction PV Cells of Different Structures
| Autor: | Georghiou, G. E., Livera, A., Timò, G., Trespidi, F., Malchiodi, A., Armani, N., Paraskeva, V. |
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| Přispěvatelé: | Georghiou, G. E. [0000-0002-5872-5851], Livera, A. [0000-0002-3732-9171] |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | 35th European Photovoltaic Solar Energy Conference and Exhibition |
| DOI: | 10.4229/35theupvsec20182018-4bv.4.4 |
| Popis: | 35th European Photovoltaic Solar Energy Conference and Exhibition; 973-977 Photoluminescence spectroscopy with contemporary two excitation lasers of different wavelength was used to demonstrate the impact of the structure of the solar cells on the coupling effects. Cells with AlInGaAs/InGaAs heterojunction and higher spacer thickness in the middle junction were found to enhance coupling between the top and middle junction. In the presence of varying NIR power and fixed green laser power both the top junction integrated luminescence and the short-circuit current of the device start to plateau at the same NIR power, thus demonstrating the transition of the current limiting junction in the device and particularly the transition from the middle to the top current limiting junction. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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