Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
| Autor: | Wolfgang Skorupa, Alejandro Pérez-Rodríguez, D. Panknin, I. Bakočević, J.M. Morante, W. Anwand, Matthias Voelskow, Hans Wirth, Gerhard Brauer, Arndt Mücklich |
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| Rok vydání: | 1999 |
| Předmět: |
SiC
High concentration Materials science genetic structures Ion beam Ion beam mixing Annealing (metallurgy) Inorganic chemistry Doping Analytical chemistry Condensed Matter Physics Focused ion beam Atomic and Molecular Physics and Optics Ion beam deposition Ion implantation electrical activation ion implantation annealing General Materials Science defects |
| Zdroj: | Scopus-Elsevier Solid State Phenomena 69-70(1999), 391-396 |
| ISSN: | 1662-9779 |
| Popis: | Results of an extensive study concerning implantation, annealing and electrical activation of Al and B layers of 6H-SiC are presented. With increasing implantation temperature the implantation induced damage decreased. After annealing dislocation loops are observed in Al implanted layers whereas loops and precepitates are found in B implanted layers. For good electrical properties amorphization must be avoided. Using flash lamp annealing hole concentration is measured for Al doping whereas for B doping a limited hole concentration is observed. |
| Databáze: | OpenAIRE |
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