Chemical Vapor Deposition of Phosphorous- and Boron-Doped Graphene Using Phenyl-Containing Molecules
| Autor: | Donald Bethke, Liliya V. Frolova, Gary Chandler, Jill Garcia, Nikolai G. Kalugin, Mekan Ovezmyradov, Eric A. Shaner, Igor V. Magedov |
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| Rok vydání: | 2015 |
| Předmět: |
Auger electron spectroscopy
Materials science Graphene Inorganic chemistry Biomedical Engineering chemistry.chemical_element Bioengineering Phosphorus General Chemistry Chemical vapor deposition Condensed Matter Physics law.invention symbols.namesake Organophosphorus Compounds chemistry law symbols Molecule General Materials Science Graphite Boron Raman spectroscopy Graphene oxide paper |
| Zdroj: | Journal of nanoscience and nanotechnology. 15(7) |
| ISSN: | 1533-4880 |
| Popis: | Simultaneous chemical vapor deposition (CVD) of graphene and "in-situ" phosphorous or boron doping of graphene was accomplished using Triphenylphosphine (TPP) and 4-Methoxyphenylboronic acid (4-MPBA). The TPP and 4-MPBA molecules were sublimated and supplied along with CH4 molecules during graphene growth at atmospheric pressure. The grown graphene samples were characterized using Raman spectroscopy. Phosphorous and boron presence in phosphorous and boron doped graphene was confirmed with Auger electron spectroscopy. The possibility of obtaining phosphorous and boron doped graphene using solid-source molecule precursors via CVD can lead to an easy and rapid production of modified large area graphene. |
| Databáze: | OpenAIRE |
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