A 130nm 1Mb Embedded Phase Change Memory with 500kb/s Single Channel Write Throughput

Autor:	Chen Yifeng, Ding Sheng, Chen Xiao-Gang, Zhong Ming, Feng Gao-Ming, Xie Zhifeng, Wang Qian, Cai Daolin, Chen Houpeng, Song Zhi-Tang, Xu Chen, WU Guanpin
Rok vydání:	2011
Předmět:	Engineering business.industry Process (computing) General Medicine Function (mathematics) Signal Power (physics) Phase-change memory business Throughput (business) Reset (computing) Computer hardware Engineering(all) Communication channel
Zdroj:	Procedia Engineering. 16:198-203
ISSN:	1877-7058
DOI:	10.1016/j.proeng.2011.08.1072
Popis:	A 130 nm 1Mb embedded phase change memory (PCM) has been achieved, requiring only three additional masks for phase change storage element, featuring 500 kb/s single channel write throughput and > 10 8 endurance. The prepare process has been optimized to reduce the cost and power. An 80 nm heat electrode has been prepared with 130 nm process. The optimal Read/Write circuit module is designed to realize the load/store function for PCM. The critical operation parameter is Reset/70 ns/2.5 mA and Set/1500 ns/1 mA, which means that the signal channel write throughput arrives to 500 kb/s.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93db86591d6eabc2ee332fdd0c5fadb8 Zobrazit plný text záznamu