High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
| Autor: | Joachim Wagner, W. Send, M. Maier, Quankui Yang, Christian Manz, Dagmar Gerthsen, Klaus Köhler, Lutz Kirste |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2005 |
| Předmět: |
arsenide
Photoluminescence Analytical chemistry quantum cascade laser Band offset Semiconductor laser theory law.invention Inorganic Chemistry molecular beam epitaxy law Molekularstrahlepitaxie Materials Chemistry Quantum well Festkörperlaser Chemistry business.industry Condensed Matter Physics Laser solid state laser Secondary ion mass spectrometry antimonide Quantenkaskadenlaser Optoelectronics Quantum cascade laser business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 280:75-80 |
| ISSN: | 0022-0248 |
| Popis: | Short wavelength (lambda < 5 mu m) quantum cascade lasers are of current interest as they operate in the technologically important atmospheric 3-5 mu m transparency window. For this wavelength range the GaInAs/AlAsSb-on-InP material system offers the advantage of a large conduction band offset of about 1.6 eV over the well-established lattice-matched GaInAs/AlInAs-on-InP material combination with a band offset of only 0.5 eV. In this paper, we report on molecular beam epitaxial growth and subsequent structural and compositional analysis of GaInAs/AlAsSb quantum wells as well as quantum cascade laser structures. Special emphasis has been laid on establishing a growth procedure which allows the growth of these structures without growth interruption at the GaInAs/AlAsSb interfaces. The epitaxial layer sequences were analyzed by high-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy. Finally, mesa waveguide GaInAs/AlAsSb QC lasers were fabricated emitting around 4.5 mu m, which could be operated in pulsed mode up to 400 K. |
| Databáze: | OpenAIRE |
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