Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions
| Autor: | V. Skorupa, M. Voelskov, Ida E. Tyschenko, Lars Rebohle, Vladimir A. Volodin |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Photoluminescence Annealing (metallurgy) Analytical chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Ion Condensed Matter::Materials Science Raman scattering spectra Nanocrystal Astrophysics::Solar and Stellar Astrophysics Spontaneous emission Recombination |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187721 |
| Popis: | The room-temperature photoluminescence emission and excitation spectra of Si3N4 films implanted with Ge+ and Ar+ ions were investigated as a function of the ion dose and temperature of subsequent annealing. It was established that the implantation of bond-forming Ge atoms during annealing right up to temperature Ta=1000 °C stimulates the formation of centers emitting in the green and violet regions of the spectrum. Implantation of inert Ar+ ions introduces predominantly nonradiative defect centers. Comparative analysis of the photoluminescence spectra, Rutherford backscattering data, and Raman scattering spectra shows that the radiative recombination is due not to quantum-well effects in Ge nanocrystals but rather recombination at the defects ≡Si-Si≡, ≡Si-Ge≡, and ≡Ge-Ge≡. |
| Databáze: | OpenAIRE |
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