Gate controlled quantum dots in monolayer WSe2
| Autor: | Abdulmenaf Altıntaş, Pawel Hawrylak, Louis Gaudreau, Adina Luican-Mayer, Takashi Taniguchi, Marek Korkusinski, Norman R. Fong, Justin Boddison-Chouinard, A. S. Sachrajda, Kenji Watanabe, Sergei Studenikin, Alex Bogan, Maciej Bieniek |
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| Rok vydání: | 2021 |
| Předmět: |
Mesoscopic physics
Materials science Condensed Matter - Mesoscale and Nanoscale Physics Physics and Astronomy (miscellaneous) business.industry FOS: Physical sciences Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Quantum technology chemistry.chemical_compound chemistry Quantum state Quantum dot 0103 physical sciences Monolayer Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Tungsten diselenide Optoelectronics Charge carrier 010306 general physics 0210 nano-technology business |
| DOI: | 10.48550/arxiv.2108.00507 |
| Popis: | Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model. Comment: 6 pages, 4 figures |
| Databáze: | OpenAIRE |
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