Carbon nitride thin films prepared by reactive sputtering: Elemental composition and structural characterization
Autor: | Carlos A. Achete, F. L. Freire, Gino Mariotto, M. M. Lacerda, D. F. Franceschini |
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Rok vydání: | 1997 |
Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces Nitride Sputter deposition Condensed Matter Physics Rutherford backscattering spectrometry Surfaces Coatings and Films elemental composition and structural characterization reactive sputtering chemistry.chemical_compound symbols.namesake Carbon film Amorphous carbon chemistry Carbon nitridide films Raman spectroscopy symbols RNA Carbon nitridide films reactive sputtering elemental composition and structural characterization RBS RNA Raman spectroscopy Thin film Carbon nitride RBS |
Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1970-1975 |
ISSN: | 1520-8559 0734-2101 |
DOI: | 10.1116/1.580667 |
Popis: | Amorphous carbon nitride thin films (a-CNx) have been deposited onto Si (100) substrates by using a rf diode sputtering system. The films were deposited in reactive nitrogen-argon atmospheres. The partial pressure of nitrogen ranged from 0% to 100% at two different deposition pressures (Pd=2 Pa and Pd=8 Pa). The film composition was determined by ion beam techniques: Rutherford backscattering spectrometry and nuclear reaction analysis. The relative amount of carbon and nitrogen in the films is nearly independent of the nitrogen partial pressure in the reactive plasma. The maximum nitrogen content is 48 at. %. The structural characterization was performed by means of Raman and infrared spectroscopies. Raman spectra revealed the presence of the D and G bands, typical of disordered carbon based materials, and a third band, at about 680 cm−1, also attributed to film disorder. Infrared spectroscopy results showed the D and G Raman bands, IR allowed due to the nitrogen incorporation in the carbon network, the p... |
Databáze: | OpenAIRE |
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