Carbon nitride thin films prepared by reactive sputtering: Elemental composition and structural characterization

Autor: Carlos A. Achete, F. L. Freire, Gino Mariotto, M. M. Lacerda, D. F. Franceschini
Rok vydání: 1997
Předmět:
Zdroj: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1970-1975
ISSN: 1520-8559
0734-2101
DOI: 10.1116/1.580667
Popis: Amorphous carbon nitride thin films (a-CNx) have been deposited onto Si (100) substrates by using a rf diode sputtering system. The films were deposited in reactive nitrogen-argon atmospheres. The partial pressure of nitrogen ranged from 0% to 100% at two different deposition pressures (Pd=2 Pa and Pd=8 Pa). The film composition was determined by ion beam techniques: Rutherford backscattering spectrometry and nuclear reaction analysis. The relative amount of carbon and nitrogen in the films is nearly independent of the nitrogen partial pressure in the reactive plasma. The maximum nitrogen content is 48 at. %. The structural characterization was performed by means of Raman and infrared spectroscopies. Raman spectra revealed the presence of the D and G bands, typical of disordered carbon based materials, and a third band, at about 680 cm−1, also attributed to film disorder. Infrared spectroscopy results showed the D and G Raman bands, IR allowed due to the nitrogen incorporation in the carbon network, the p...
Databáze: OpenAIRE