High resolution LAPS and SPIM
| Autor: | Shihong Jiang, Steffi Krause, Patrik Schmuki, Ying-Lin Zhou, Julia Kunze, Li Chen |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Photocurrent
Materials science Silicon business.industry Resolution (electron density) chemistry.chemical_element law.invention lcsh:Chemistry Capacitor Silicon on sapphire chemistry lcsh:Industrial electrochemistry lcsh:QD1-999 Gate oxide law Microscopy Electrochemistry Optoelectronics business Electrical impedance lcsh:TP250-261 |
| Zdroj: | Electrochemistry Communications, Vol 12, Iss 6, Pp 758-760 (2010) |
| ISSN: | 1388-2481 |
| Popis: | The resolution of photocurrent measurements at field-effect capacitors as used in light-addressable potentiometric sensors (LAPS) and scanning photo-induced impedance microscopy (SPIM) has been investigated using silicon on sapphire (SOS) substrates illuminated at different wavelengths. Using a two-photon effect in silicon (λ=1250 nm) to generate the photocurrent, genuine submicrometer resolution has been demonstrated for LAPS and SPIM. Improved sensitivity for both LAPS and SPIM was obtained using a 6.7 nm thick gate oxide on SOS anodically grown in 0.1 M HCl. Keywords: Anodic oxide, Two-photon effect, High resolution potential and impedance measurements, LAPS, SPIM |
| Databáze: | OpenAIRE |
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