On-Chip TaOx-Based Non-volatile Resistive Memory for in vitro Neurointerfaces
| Autor: | Igor A. Karateev, Gennady Krasnikov, Dmitiry Negrov, Yury Matveyev, Maksim Zhuk, Andrei Zenkevich, Sergei Zarubin, E. S. Gornev |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
non-volatile memory
Materials science neural tissue in vitro neurointerfaces 02 engineering and technology law.invention lcsh:RC321-571 03 medical and health sciences 0302 clinical medicine law ddc:610 Electronics back-end-of-line process lcsh:Neurosciences. Biological psychiatry. Neuropsychiatry Original Research business.industry high-density microelectrode arrays resistive switching Reading (computer) General Neuroscience Transistor 1T-1R device 021001 nanoscience & nanotechnology Resistive random-access memory Power (physics) Non-volatile memory CMOS Optoelectronics 0210 nano-technology business 030217 neurology & neurosurgery Voltage Neuroscience tantalum oxide |
| Zdroj: | Frontiers in Neuroscience Frontiers in Neuroscience, Vol 14 (2020) Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094 |
| ISSN: | 1662-453X 1662-4548 |
| Popis: | Frontiers in neuroscience 14, 94 (2020). doi:10.3389/fnins.2020.00094 The development of highly integrated electrophysiological devices working in directcontact with living neuron tissue opens new exciting prospects in the fields ofneurophysiology and medicine, but imposes tight requirements on the power dissipatedby electronics. On-chip preprocessing of neuronal signals can substantially decrease thepower dissipated by external data interfaces, and the addition of embedded non-volatilememory would significantly improve the performance of a co-processor in real-timeprocessing of the incoming information stream from the neuron tissue. Here, we evaluatethe parameters of TaOx-based resistive switching (RS) memory devices produced bymagnetron sputtering technique and integrated with the 180-nm CMOS field-effecttransistors as possible candidates for on-chip memory in the hybrid neurointerfaceunder development. The electrical parameters of the optimized one-transistor–oneresistor (1T-1R) devices, such as the switching voltage (approx. ±1 V), uniformity ofthe Roff/Ron ratio (∼10), read/write speed ( Published by Frontiers Research Foundation, Lausanne |
| Databáze: | OpenAIRE |
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