Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing
| Autor: | Ondřej Caha, Alan Kuběna, Josef Kuběna, Mojmír Meduňa |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
010302 applied physics
Materials science Silicon Precipitation (chemistry) Nucleation chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Oxygen Crystallographic defect Crystallography chemistry Chemical physics Vacancy defect 0103 physical sciences General Materials Science Wafer Diffusion (business) 0210 nano-technology |
| Zdroj: | Journal of physics. Condensed matter : an Institute of Physics journal. 21(10) |
| ISSN: | 0953-8984 |
| Popis: | The successful application of the rapid thermal annealing (RTA) process for creation of a magic denude zone in individual Czochralski silicon wafers is based on vacancy controlled oxygen precipitation. The kinetics of the vacancy and self-interstitial processes in Si wafers are studied in this paper. Detailed insight into nucleation processes, out-diffusion and vacancy-interstitial recombination during the RTA leads to a new model of interaction between vacancies and oxygen. The calculation of the distribution function of these defects follows from modified Becker-Doring equations transformed for vacancies and interstitials and extended by diffusion and recombination terms. The new model, which includes the vacancy influence on oxygen nucleation and which follows from this theoretical analysis, corresponds very well to the experimental properties of formation of bulk micro-defects during RTA processes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|