Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
| Autor: | Gaudenzio Meneghesso, E. Canato, Benoit Bakeroot, A. Stockman, Matteo Meneghini, Peter Moens |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
enhancement mode (e-mode) 01 natural sciences Capacitance law.invention Stress (mechanics) Computer Science::Hardware Architecture Computer Science::Emerging Technologies law 0103 physical sciences threshold voltage stability conduction mechanism Electrical and Electronic Engineering Safety Risk Reliability and Quality 010302 applied physics high-electron-mobility transistor (HEMT) business.industry technology computer-aided design (TCAD) Transistor Wide-bandgap semiconductor Gallium nitride (GaN) p-GaN gate Charge (physics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Thermal conduction Electronic Optical and Magnetic Materials Threshold voltage Logic gate Optoelectronics business |
| Popis: | We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes. The threshold voltage is monitored from $10~\mathrm {\mu }\text{s}$ up to 100 s under positive gate bias stress and during recovery. The threshold voltage stability is affected by the balance between hole and electron current in the gate stack. More specifically, devices with uniform hole conduction across the p-GaN gate area demonstrate stable threshold voltage behavior up to $V_{g}=5\,\mathrm {V}$ , whereas devices with a dominating gate perimeter electron conduction demonstrate larger instabilities. Finally, the threshold voltage stability during OFF-state pulsed stress is investigated and correlated to the excess gate-to-drain charge extracted from capacitance curves. |
| Databáze: | OpenAIRE |
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