Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions
| Autor: | Roberto Annunziata, O. Weber, J. Jasse, Paola Zuliani, V. Caubet, Franck Arnaud, G. Samanni, Enrico Gomiero, L. Favennec, R. Berthelon, D. Ristoiu, C. Jahan, L. Clement, J. P. Reynard, R. Ranica |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Chalcogenide Measure (mathematics) law.invention resistance chalcogenide chemistry.chemical_compound law Electrical and Electronic Engineering Crystallization business.industry Process (computing) quenching time Function (mathematics) Ge-Sb-Te (GST) compounds Electronic Optical and Magnetic Materials Amorphous solid chemistry phase change memory (PCM) Amorphous Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering State (computer science) business lcsh:TK1-9971 Reset (computing) Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 7, Pp 517-521 (2019) |
| ISSN: | 2168-6734 |
| DOI: | 10.1109/jeds.2019.2913467 |
| Popis: | Quenching-time characterization is the way to measure the speed of chalcogenide material to transform from the amorphous (RESET) state to the crystalline (SET) one after application of a proper programming pulse. It is here proposed to study the impact of process and programming conditions on cell performances, highlighting possible composition variation, and modifications of the physical dimension of the PCM active volume (the dome). |
| Databáze: | OpenAIRE |
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