Sr/Si(100)(1 × 2) reconstruction as a template for the growth of crystalline high-k films on silicon: Atomic structure and reactivity
| Autor: | Pekka Laukkanen, Marjukka Tuominen, Jaakko Mäkelä, Johnny Dahl, Mikhail Kuzmin, Marko Patrick John Punkkinen, Kalevi Kokko, Muhammad Yasir |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Dimer chemistry.chemical_element Context (language use) 02 engineering and technology 01 natural sciences law.invention Metal chemistry.chemical_compound law Ab initio quantum chemistry methods Vacancy defect 0103 physical sciences Materials Chemistry ta216 010306 general physics High-κ dielectric Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Crystallography chemistry visual_art visual_art.visual_art_medium Scanning tunneling microscope 0210 nano-technology |
| Zdroj: | Surface Science. 646:140-145 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2015.07.022 |
| Popis: | Atomic structure of the Sr-adsorbed Si(100)(1 × 2) surface has been investigated by scanning tunneling microscopy (STM) and ab initio calculations. This surface reveals rows of Sr atoms between unbuckled Si dimer rows as well as an abundance of vacancy defects in the metal rows. The density of such defects can be minimized by the optimization of growth procedure; however, they cannot be avoided completely, forming vacancy lines along the [021] directions, where the neighboring vacancies are connected via the Si dimer. The origin of vacancy defects is discussed in the context of Sr/Si(100)(1 × 2) and related surfaces. In addition, the interaction of Sr/Si(100)(1 × 2) with oxygen is examined by STM directly during the exposure in the O 2 gas. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect