Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide

Autor:	Dago M. de Leeuw, Henrique L. Gomes, Stefan C. J. Meskers, Jingxin Wang, René A. J. Janssen, Benjamin F. Bory
Přispěvatelé:	Macromolecular and Organic Chemistry, Molecular Materials and Nanosystems
Jazyk:	angličtina
Rok vydání:	2014
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Inorganic chemistry Doping Halide Organic semiconductor Semiconductor Electroforming Frenkel defect Optoelectronics Light-emitting electrochemical cell business Diode
Zdroj:	Applied Physics Letters, 105, 233502-1/5. American Institute of Physics Repositório Científico de Acesso Aberto de Portugal Repositório Científico de Acesso Aberto de Portugal (RCAAP) instacron:RCAAP
ISSN:	0003-6951
Popis:	Electroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron-hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 10(25)/m(3). The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics. (C) 2014 Author(s).
Databáze:	OpenAIRE
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