Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures
| Autor: | Gyula Károlyházy, David Beke, Adam Gali, Katalin Kamarás, G. Bortel, Zsolt Czigány |
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| Rok vydání: | 2017 |
| Předmět: |
Multidisciplinary
business.industry Exciton lcsh:R lcsh:Medicine Nanoparticle Nanotechnology 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Isotropic etching Article 0104 chemical sciences chemistry.chemical_compound Microcrystalline Semiconductor chemistry Silicon carbide lcsh:Q Nanometre lcsh:Science 0210 nano-technology business Science technology and society |
| Zdroj: | Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017) Scientific Reports |
| ISSN: | 2045-2322 |
| DOI: | 10.1038/s41598-017-10751-x |
| Popis: | Production of semiconductor nanostructures with high yield and tight control of shape and size distribution is an immediate quest in diverse areas of science and technology. Electroless wet chemical etching or stain etching can produce semiconductor nanoparticles with high yield but is limited to a few materials because of the lack of understanding the physical-chemical processes behind. Here we report a no-photon exciton generation chemistry (NPEGEC) process, playing a key role in stain etching of semiconductors. We demonstrate NPEGEC on silicon carbide polymorphs as model materials. Specifically, size control of cubic silicon carbide nanoparticles of diameter below ten nanometers was achieved by engineering hexagonal inclusions in microcrystalline cubic silicon carbide. Our finding provides a recipe to engineer patterned semiconductor nanostructures for a broad class of materials. |
| Databáze: | OpenAIRE |
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