Control of carbon nanotube morphology by change of applied bias field during growth
| Autor: | Prabhakar R. Bandaru, Chiara Daraio, Dong-Wook Kim, In Kyeong Yoo, Chong M. Wang, Joseph F. Aubuchon, Li-Han Chen, Andrew I. Gapin, Sungho Jin |
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| Rok vydání: | 2004 |
| Předmět: |
Nanotube
Plasma etching Materials science Physics and Astronomy (miscellaneous) business.industry chemistry.chemical_element Nanotechnology Plasma Chemical vapor deposition Carbon nanotube Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Carbon nanotube quantum dot Condensed Matter::Materials Science chemistry Etching (microfabrication) law Optoelectronics business Carbon Caltech Library Services |
| Zdroj: | Applied Physics Letters. 85:5373-5375 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1830081 |
| Popis: | Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (~200 nm dia.) with a small diameter nanotube (~7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy. |
| Databáze: | OpenAIRE |
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