Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions
| Autor: | Bernard Dieny, Clarisse Ducruet, Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa |
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| Přispěvatelé: | SPINtronique et TEchnologie des Composants (SPINTEC), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS), ANR-10-NANO-0013,PATHOS,Matériaux à Anisotropie Perpendiculaire pour cellules Mémoire Magnétiques Non-volatiles Haute-densité(2010), European Project: 246942,EC:FP7:ERC,ERC-2009-AdG,HYMAGINE(2010), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
010302 applied physics
[PHYS]Physics [physics] Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Tantalum chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Magnetization Magnetic anisotropy Tunnel magnetoresistance Condensed Matter::Materials Science Nuclear magnetic resonance chemistry Condensed Matter::Superconductivity 0103 physical sciences Electrode Perpendicular Coupling (piping) 0210 nano-technology Layer (electronics) |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2013, 103 (5), pp.052402. ⟨10.1063/1.4816968⟩ Applied Physics Letters, 2013, 103 (5), pp.052402. ⟨10.1063/1.4816968⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.4816968⟩ |
| Popis: | International audience; Ultrathin Ta layers were inserted in the bottom hard (Co/Pt)/Ta/CoFeB/MgO magnetic electrode of perpendicular magnetic tunnel junctions. The magnetization of the top part of this electrode abruptly falls in-plane when the Ta thickness exceeds 0.45 nm. This results from the balance between the various energy terms acting on this layer (exchange-like coupling through Ta, demagnetizing energy, and perpendicular anisotropy at the CoFeB/MgO interface). For small Ta thicknesses, this insertion leads to a strong improvement of the tunnel magnetoresistance, as long as the magnetization of all layers remains perpendicular-to-plane. |
| Databáze: | OpenAIRE |
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