Large‐Scale‐Compatible Stabilization of a 2D Semiconductor Platform toward Discrete Components
| Autor: | Florian Godel, Bernard Servet, Pierre Brus, Sophie Collin, Victor Zatko, Patrick Garabedian, Pierre Seneor, Marie-Blandine Martin, Odile Bezencenet, Raphaël Aubry, Stéphane Xavier, Bruno Dlubak, Marta Galbiati |
|---|---|
| Přispěvatelé: | Thales Research and Technologies [Orsay] (TRT), THALES, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Passivation Scale (ratio) business.industry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Engineering physics 0104 chemical sciences Electronic Optical and Magnetic Materials [SPI.TRON]Engineering Sciences [physics]/Electronics Semiconductor visual_art Electronic component visual_art.visual_art_medium [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] 0210 nano-technology business |
| Zdroj: | Advanced Electronic Materials Advanced Electronic Materials, Wiley, 2021, 7 (4), pp.2001109. ⟨10.1002/aelm.202001109⟩ |
| ISSN: | 2199-160X |
| Popis: | International audience; Atomically thin 2D materials have drawn considerable attention in the past years with potential ranging from transistors to optoelectronics. As such, they are now foreseen as strong candidates for epitaxy-free technologies and the tetrad of size-weight-power-and-cost (SWAP-C) reduction. Targeting radiofrequency (RF) applications, the 2D semiconducting transition metal dichalcogenides (TMDC) family can offer the opportunity of wide tunability of their electronic properties, providing a large variety of band gaps. However, evaluation and integration of those materials into discrete components requires a stabilization of their properties. This work focuses on the evaluation of a large-scale compatible fabrication/passivation process on large area (>1000 μm2) monolayers of the prototypical 2D semiconductor MoS2. The process is developed including pre- and post-patterning protection/passivation layers. It is shown to reduce the initial natural p-doping of the sample, leading to lower transistor threshold voltages, a 10^6 ION/IOFF ratio, and an effective averaged field-effect mobility under ambient conditions of 20 cm2 V−1 s−1 (up to 35 cm2 V−1 s−1 for some devices), which represents an increase by a 40-fold factor compared to a conventional process carried on the large scale platform. This work represents an important step toward the integration of 2D TMDCs in discrete RF circuits and components. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text