Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
| Autor: | Giulia Broglia, Gennadi Bersuker, Luca Larcher, Monia Montorsi, Guido Ori, Luca Vandelli, Andrea Padovani, Paolo Pavan |
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| Přispěvatelé: | Università degli Studi di Modena e Reggio Emilia (UNIMORE), Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Department of Environmental Science, Informatics and Statistics, University of Ca’ Foscari [Venice, Italy] |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
010302 applied physics
Work (thermodynamics) Materials science Molecular electronics Nanotechnology 02 engineering and technology RRAM modeling forming 021001 nanoscience & nanotechnology Hafnium compounds 01 natural sciences Resistive random-access memory [SPI.MAT]Engineering Sciences [physics]/Materials [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry 0103 physical sciences Conductive filament [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [CHIM]Chemical Sciences 0210 nano-technology ComputingMilieux_MISCELLANEOUS |
| Zdroj: | 2011 IEEE International Electron Devices Meeting (IEDM) 2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. pp.17.5.1-17.5.4, ⟨10.1109/IEDM.2011.6131574⟩ |
| DOI: | 10.1109/IEDM.2011.6131574⟩ |
| Popis: | In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices. |
| Databáze: | OpenAIRE |
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