| Autor: |
John A. Ott, Marinus Hopstaken, Stephen W. Bedell, Curtis Durfee, Hart Sean, Malcolm S. Carroll, Pat Gumann, Sarunya Bangsaruntip |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
ECS Meeting Abstracts. :1766-1766 |
| ISSN: |
2151-2043 |
| DOI: |
10.1149/ma2020-02241766mtgabs |
| Popis: |
The extremely high hole mobilities attainable in strained germanium quantum wells (QW) provide a unique pathway to develop novel devices in the emerging field of quantum electronics. A major challenge associated with the growth of Ge QW structures using the industrial standard reduced-pressure chemical vapor deposition (RP-CVD) technique is the incorporation of unintentional impurities in the growing film. We will show that a compromise exists between the growth conditions that minimize the various impurities (mainly O and Si) and the abruptness of the QW. The purity of the incoming gas plays a central role in this compromise and will be discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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