Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen

Autor:	Dawid Kot, Gudrun Kissinger, Wilfried Von Ammon
Rok vydání:	2012
Předmět:	Flash-lamp Millisecond Materials science Precipitation (chemistry) Annealing (metallurgy) Oxide Analytical chemistry chemistry.chemical_element Oxygen Crystallographic defect Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Thermal Wafer
Zdroj:	ECS Journal of Solid State Science and Technology. 1:P269-P275
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2.008206jss
Popis:	The precipitation of oxygen was investigated after rapid thermal annealing pre-treatments for 30 s in the range 1100-1250 {degree sign}C and after flash lamp annealing for 3 ms and 20ms with different irradiances up to melting of the wafer surface. The difference between thermal processing on the second and on the millisecond scales is based on the temperature profiles generated by the different types of processing. These profiles influence the shrinking of grown-in oxide precipitate nuclei and the generation, diffusion, and annihilation of intrinsic point defects and thus the oxygen precipitation during further processing. Oxygen precipitation can be suppressed by flash anneals or bulk defect zones and defect denuded zones for internal gettering can be created both depending on the flash duration and energy density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91a4dab70a153b7932dd3be6fbd47256 https://doi.org/10.1149/2.008206jss Zobrazit plný text záznamu