An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes

Autor:	Cheng-You Wu, Tzu-Hsun Wang, Pinghui S. Yeh, Yu-Chieh Chiu, Tzu-Chieh Chou, Jia-Jun Zhang
Rok vydání:	2019
Předmět:	Transimpedance amplifier Materials science light-emitting diodes UV sensors 02 engineering and technology medicine.disease_cause Biochemistry Article Analytical Chemistry law.invention 020210 optoelectronics & photonics photodiodes law 0202 electrical engineering electronic engineering information engineering medicine ComputerSystemsOrganization_SPECIAL-PURPOSEANDAPPLICATION-BASEDSYSTEMS Electrical and Electronic Engineering Instrumentation indium-tin oxide Diode Photocurrent business.industry Biasing 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Indium tin oxide Photodiode Optoelectronics 0210 nano-technology business Ultraviolet Light-emitting diode
Zdroj:	Sensors (Basel, Switzerland) Sensors Volume 19 Issue 22
ISSN:	1424-8220
DOI:	10.3390/s19224938
Popis:	The monolithic integration of an ultraviolet (UV) sensor and warning lamp would reduce the cost, volume, and footprint, in comparison to a hybrid combination of discrete components. We constructed a module comprising a monolithic sensor indicator device based on basic p&ndash i&ndash n (PIN) photodiodes and a transimpedance amplifier. GaN-based light-emitting diodes (LEDs) with an indium-tin oxide (ITO) current-spreading layer and PIN photodiodes without ITO deposition on the light-receiving area, were simultaneously fabricated. The resultant incident photon-to-electron conversion efficiencies of the PIN photodiodes at UV wavelengths were significantly higher than those of the reverse-biased LEDs. The photocurrent signals of the PIN photodiode were then converted to voltage signals to drive an integrated visible LED, which functioned as an indicator. The more the ambient UV-light intensity exceeded a specified level, the brighter the glow of the LED. The responsivities of 0.20 and 0.16 A/W were obtained at 381 and 350 nm, respectively, under a bias voltage of 5 V. We also addressed the epitaxial structural details that can affect the collection efficiency of the photocurrent generated by UV light absorption. The crosstalk between the PIN photodiode and LEDs (of various center-to-center distances) was measured.
Databáze:	OpenAIRE
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