Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface
| Autor: | Dmitruk, N.L., Borkovskaya, O.Yu., Mamykin, S.V., Havrylenko, T.S., Mamontova, I.B., Kotova, N.V., Basiuk, E.V. |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Condensed Matter::Materials Science
Materials science Condensed Matter::Other Interface (Java) law Photovoltaic system Nanotechnology Carbon nanotube Electrical and Electronic Engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention |
| Zdroj: | Semiconductor physics, quantum electronics and optoelectronics. 18:31-35 |
| ISSN: | 1605-6582 1560-8034 |
| DOI: | 10.15407/spqeo18.01.031 |
| Popis: | The effect of single-wall carbon nanotubes nanolayer on photoelectric properties of Au/n-GaAs photovoltaic structure with a microrelief interface has been investigated. Microrelief interfaces of dendrite-like and quasi-grating type aimed at enhancement of photocurrent have been prepared by the wet chemical anisotropic etching of GaAs. Carbon nanotubes obtained using the arc-discharge method were deposited on GaAs surface modified with poly(vinylpyridine) by dip-coating repeated several times. Optical, photoelectric and electrical properties of Au/GaAs structures have been studied in dependence on the averaged thickness of nanotubes nanolayer. Considerable photocurrent enhancement has been determined for structures with both the flat and textured interface but with a different optimal thickness of nanotubes layer. The effect was concluded to be caused by increasing the lateral photocurrent component due to enlargement of the current collection area and increase of the light trapping. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|