Suppressing Non-Uniform Tunneling in InAs/GaSb TFET With Dual-Metal Gate
| Autor: | Chenming Hu, Chun-Yen Chang, Edward Yi Chang, Ching-Yi Hsu |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Transistor 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention law Condensed Matter::Superconductivity Electric field Logic gate 0103 physical sciences lcsh:Electrical engineering. Electronics. Nuclear engineering Electrical and Electronic Engineering 0210 nano-technology Metal gate lcsh:TK1-9971 Quantum well Quantum tunnelling Biotechnology Voltage Surface states |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 4, Iss 2, Pp 60-65 (2016) |
| ISSN: | 2168-6734 |
| Popis: | Non-uniformity in electric field causes early onset of tunneling near the edge of InAs/GaSb hetero-junction tunneling field-effect transistors. When a small area, often an edge, of the tunneling junction has a lower turn-on voltage, the steep switching characteristic is degraded. Fermi pinning at InAs surface greatly worsen the uniformity. We propose a dual-metal gate structure to address the non-uniformity issue. With proper choice of work functions, the dual-metal gate structure can effectively suppress the early onset of edge tunneling and significantly improve the subthreshold swing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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