Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride
| Autor: | H. V. Savytskyy, O. Yu. Bonchyk, Z. Świątek, D. V. Marin, I. I. Izhnin, O. I. Fitsych, V. S. Varavin, A. V. Voitsekhovskii, Y. Morgiel, Sergey A. Dvoretsky, A. G. Korotaev, K. D. Mynbaev, M. V. Yakushev |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
inorganic chemicals
Radiation Materials science Annealing (metallurgy) Analytical chemistry chemistry.chemical_element молекулярно-лучевая эпитаксия Optical reflection теллурид кадмия-ртути chemistry.chemical_compound отжиг chemistry Transmission electron microscopy General Materials Science мышьяк Surface layer Mercury cadmium telluride Electrical and Electronic Engineering Arsenic Molecular beam epitaxy |
| Zdroj: | Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17 |
| Popis: | Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted. |
| Databáze: | OpenAIRE |
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