Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications
| Autor: | Marco Fanciulli, Alessandro Molle, O. Salicio, Michael Heuken, Massimo Longo, Claudia Wiemer, P.K. Baumann, B. Seitzinger, Roberto Fallica, Ch. Giesen, Simon A. Rushworth |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Chalcogenide Nucleation Nanotechnology Non-volatile memories Island growth Condensed Matter Physics Inorganic Chemistry Phase-change memory chemistry.chemical_compound chemistry Chemical engineering Phase (matter) MOCVD Materials Chemistry Deposition (phase transition) Metalorganic vapour phase epitaxy Sheet resistance Chalcogenides |
| Zdroj: | Journal of crystal growth 310 (2008): 5053–5057. doi:10.1016/j.jcrysgro.2008.07.054 info:cnr-pdr/source/autori:M Longo a; O. Salicio a; C. Wiemer a; R. Fallica a; A. Molle a; M. Fanciulli a,b; C. Giesen c; B. Seitzinger c; P.K. Baumann c; M. Heuken c; S. Rushworth d/titolo:Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications/doi:10.1016%2Fj.jcrysgro.2008.07.054/rivista:Journal of crystal growth/anno:2008/pagina_da:5053/pagina_a:5057/intervallo_pagine:5053–5057/volume:310 |
| DOI: | 10.1016/j.jcrysgro.2008.07.054 |
| Popis: | We report on the bubbler-type MOCVD growth of GexSbyTez, (GST) on SiO2/Si substrates, potentially transferable to phase change memory (PCM) devices. Pure nitrogen Was used as the process gas in order to reduce toxicity whilst increasing the simplicity of the process. This systematic Study allowed the modification of the growth parameters on SiO2 to move through initial sub-micrometric crystalline grain deposition on to lateral island growth. Temperature was observed to play a critical role in film quality with strong morphology and island shape/size changes for small thermal variations. Eventually, continuous layers of GST in the hcp phase and composition close to the 2:2:5 were Studied. The deposition on different substrates was also investigated. Although crystal nucleation is still far from achieving the target step coverage required for uniform coating of patterned Substrates, the electrical sheet resistance of CST films exhibited values corresponding to those expected for chalcogenide materials suitable to he integrated into PCM devices. (C) 2008 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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