The effect of hot electron current density on nMOSFET reliability
| Autor: | Stephen Taylor, C. Beech, I.S. Al-Kofahi, Octavian Buiu |
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| Rok vydání: | 1998 |
| Předmět: |
Range (particle radiation)
Field (physics) business.industry Chemistry Electrical engineering Substrate (electronics) Electron Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Computational physics Reliability (semiconductor) Electrical and Electronic Engineering Current (fluid) Safety Risk Reliability and Quality business Current density Hot-carrier injection |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(98)00074-2 |
| Popis: | In this paper, we consider the reliability of n-channel MOSFETs using the Substrate Hot Electron (SHE) technique. We confirm that there is a dependence of oxide degradation upon the current density during SHE injection (as previously observed by ourselves and others). In order to explain this effect, the detrapping of previously trapped electrons must be taken into account A new theoretical model is presented which accounts for the main features of the phenomenon. We consider the technologically important low field case ( −1 ) for a range current densities (from 0.05 to 2 mAcm −2 ) and injected charge densities up to 10 C/cm 2 . The device lifetime for these different conditions is calculated and shown to be also a function of the current density. It is clear that in order to calculate the lifetime during normal operation from accelerated testing, the precise hot electron injection current density must be known, furthermore it must be demonstrated that the same degradation mechanisms hold at very high fields and/or current densities. This result has profound implications for device reliability predictions made using accelerated hot electron measurements and calls into question lifetime predictions made where the effect is not taken into account. |
| Databáze: | OpenAIRE |
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