Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates
| Autor: | Stéphane Brochen, Pierre Ferret, Guy Feuillet, Ivan-Christophe Robin, F. Gemain, Matthieu Lafossas, Julien Pernot |
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| Přispěvatelé: | Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Semi-conducteurs à large bande interdite (SC2G), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF) |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
010302 applied physics
Materials science Dopant Doping Analytical chemistry General Physics and Astronomy 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Impurity 0103 physical sciences Sapphire [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Metalorganic vapour phase epitaxy Thin film 0210 nano-technology ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Journal of Applied Physics Journal of Applied Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩ Journal of Applied Physics, American Institute of Physics, 2014, 115 (11), pp.113508. ⟨10.1063/1.4868591⟩ |
| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.4868591⟩ |
| Popis: | ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant in ZnO thin films grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and ZnO substrates. In both cases, secondary ion mass spectroscopy (SIMS) measurements give evidence for a strong diffusion of impurities from the substrate to the epilayer, especially for silicon and aluminum. In the case of samples grown on sapphire substrates, aluminum follows Fick's diffusion law on a wide growth temperature range (800−1000°C). Thus, the saturation solubility and the diffusion coefficient of aluminum in ZnO single crystals have been determined. Furthermore, the comparison between SIMS impurity and effective dopant concentrations determined by capacitance-voltage measurements highlights, on one hand a substitutional mechanism for aluminum diffusion, and on the ... |
| Databáze: | OpenAIRE |
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