Nanostructuring of Mo/Si multilayers by means of reactive ion etching using a three-level mask

Autor: Hsin-Yi Lee, L. Matay, P. Hrkut, Peter Hudek, Ulf Kleineberg, Eva Majkova, Ulrich Heinzmann, Kostic, L. Dreeskornfeld, Stefan Luby, G. Haindl, Burkhard E. Volland, F. Shi, Ivo W. Rangelow
Rok vydání: 2004
Předmět:
Zdroj: Thin Solid Films. 458:227-232
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2003.09.070
Popis: Recently, Mo/Si multilayer reflectors have been gaining industry interest as a promising choice for the next generation extreme ultraviolet mask material for printing sub 70 nm feature size devices. A reactive ion etching system with optimized hardware using CHF3/Ar process regime shows the capability for highly anisotropic etching of sub congruent to400 nm feature sizes in Mo/Si test multilayers with ten periods and a bilayer thickness of 7.8 nm which were prepared by e-beam evaporation. A three-level-mask technique consisting of a top resist mask layer poly-methyl-meth-acrylate, a middle hard amorphous Si mask layer and a bottom-level polyimide layer is used to create the etch mask. The etch characteristics of the polyimide film is shown to be one of the major factors determining the success of the described multilayer etching process. The developed etching technology demonstrates superior process performance without facets, excellent uniformity and good profile control. No contamination, degeneration or defect generation in the unetched multilayer structure could be detected. This non-conventional process results in minimum deposition during the etching thus eliminating the need for a dry or wet cleaning. Sidewall angles in Mo/Si multilayers of 85degrees, without undercut, bowing and ripples resulting in smooth sidewalls are achieved. (C) 2003 Elsevier B.V. All rights reserved.
Databáze: OpenAIRE
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