| Autor: |
Sofie Vogt, Clemens Petersen, Max Kneiß, Daniel Splith, Thorsten Schultz, Holger von Wenckstern, Norbert Koch, Marius Grundmann |
| Rok vydání: |
2023 |
| Předmět: |
|
| Popis: |
Structural and electrical properties of undoped and doped amp; 945; amp; 8722;Ga2O3 thin films grown by pulsed laser deposition on m plane sapphire in a two step process are presented. A buffer layer of undoped amp; 945; amp; 8722;Ga2O3 is introduced below the electrically active thin film to improve the crystal quality and enable the stabilization of the amp; 945; phase at lower substrate temperatures for sufficient dopant incorporation. Donor doping of the active layers with tin, germanium and silicon, respectively, is realized below a critical substrate temperature of 600 C. Depth resolved X ray photoelectron spectroscopy measurements on tin doped samples reveal a lower amount of tin in the bulk thin film compared to the surface as well as a lower tin incorporation for higher substrate temperatures, indicating desorption or float up processes that determine the incorporation of the dopants. Electron mobilities as high as 17 amp; 8202;cm2V amp; 8722;1s amp; 8722;1 at 1.4 1019 amp; 8202;cm amp; 8722;3 and 37 amp; 8202;cm2V amp; 8722;1s amp; 8722;1 at 3.7 1018 amp; 8202;cm amp; 8722;3 are achieved for tin and germanium doped amp; 945; amp; 8722;Ga2O3 thin films, respectively. Further, a narrow window of suitable annealing temperature from 680 K to 700 K for obtaining ohmic Ti Al Au layer stacks was identified. For higher annealing temperatures a deterioration of the electrical properties of the thin films was observed suggesting the need for developing low temperature contacting procedures for amp; 945; amp; 8722;Ga2O3 based devices |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
