Integrated diffusion–recombination model for describing the logarithmic time dependence of plasma damage in porous low-k materials
| Autor: | Gerard T. Barkema, Herbert Struyf, Denis Shamiryan, Adam Urbanowicz, Mikhail R. Baklanov, Christian Maes, Eddy Kunnen |
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| Rok vydání: | 2011 |
| Předmět: |
Work (thermodynamics)
porous business.industry Chemistry Radical diffusion Low-k dielectric Plasma Condensed Matter Physics Random walk Molecular physics recombination Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics plasma damage Electrical and Electronic Engineering Diffusion (business) business Porosity low-k Recombination |
| Zdroj: | Microelectronic Engineering. 88:631-634 |
| ISSN: | 0167-9317 |
| Popis: | This work proposes an extended model that describes the propagation of damage in porous low-k material exposed to a plasma. Recent work has indicated that recombination and diffusion play a more dominant role than VUV light [1-5] in oxygen plasma induced damage. Especially at low depths, the radical concentration is determined by the number of radicals that disappear back into the plasma while the final depth of damage is defined by recombination of oxygen atoms. A logarithmic equation has been proposed to describe the behavior as a function of time. In this work this equation is extended to take diffusion into account, next to recombination. The results are in agreement with experimental data and one-dimensional random walk theory calculations. (C) 2010 Elsevier B.V. All rights reserved. ispartof: Microelectronic Engineering vol:88 issue:5 pages:631-634 ispartof: location:BELGIUM, Mechelen status: published |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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