Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems
Autor: | Byung Jin Cho, Woojin Park, Jae Hyeon Nam, Hye Yeon Jang, Yonghun Kim, Jung-Dae Kwon |
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Jazyk: | angličtina |
Rok vydání: | 2020 |
Předmět: |
Materials science
Silicon General Chemical Engineering chemistry.chemical_element Context (language use) 02 engineering and technology Nb2O5 interlayer 010402 general chemistry 01 natural sciences Article Synapse lcsh:Chemistry symbols.namesake synapse device General Materials Science wse2 nbse2 NbSe2 business.industry WSe2 Heterojunction 021001 nanoscience & nanotechnology nb2o5 interlayer 0104 chemical sciences chemistry Neuromorphic engineering lcsh:QD1-999 2d heterostructure symbols Optoelectronics neuromorphic system van der Waals force 0210 nano-technology business Layer (electronics) Realization (systems) |
Zdroj: | Nanomaterials, Vol 10, Iss 1, p 88 (2020) Nanomaterials Volume 10 Issue 1 |
ISSN: | 2079-4991 |
Popis: | Despite extensive investigations of a wide variety of artificial synapse devices aimed at realizing a neuromorphic hardware system, the identification of a physical parameter that modulates synaptic plasticity is still required. In this context, a novel two-dimensional architecture consisting of a NbSe2/WSe2/Nb2O5 heterostructure placed on an SiO2/p+ Si substrate was designed to overcome the limitations of the conventional silicon-based complementary metal-oxide semiconductor technology. NbSe2, WSe2, and Nb2O5 were used as the metal electrode, active channel, and conductance-modulating layer, respectively. Interestingly, it was found that the post-synaptic current was successfully modulated by the thickness of the interlayer Nb2O5, with a thicker interlayer inducing a higher synapse spike current and a stronger interaction in the sequential pulse mode. Introduction of the Nb2O5 interlayer can facilitate the realization of reliable and controllable synaptic devices for brain-inspired integrated neuromorphic systems. |
Databáze: | OpenAIRE |
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