Boron Emitter Formation by Plasma Immersion Ion Implantation in n-type PERT Silicon Solar Cells
| Autor: | J.F. Lerat, Marianne Coig, Frederic Milesi, Frédéric Mazen, Thomas Michel, Yannick Veschetti, Sébastien Dubois, Jérôme Le Perchec, Thibaut Desrues, Laurent Roux |
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| Rok vydání: | 2016 |
| Předmět: |
thermal annealing
Materials science Silicon chemistry.chemical_element Nanotechnology doping 02 engineering and technology Substrate (electronics) 01 natural sciences Energy(all) 0103 physical sciences ion implantation Wafer Crystalline silicon Boron 010302 applied physics business.industry Doping phosphorus BSF 021001 nanoscience & nanotechnology Plasma-immersion ion implantation n-type silicon Ion implantation plasma immersion chemistry solar cells boron emitter PERT Optoelectronics 0210 nano-technology business |
| Zdroj: | Energy Procedia. 92:697-701 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2016.07.046 |
| Popis: | The use of plasma immersion ion implantation (PIII) is a relevant approach for the development of advanced solar cells technologies at lower cost (€/W p ). In this paper, we report on the development of homogeneous boron (B) doping of n-type crystalline silicon (cSi) substrate by the PIII technique. Using diborane (B 2 H 6 ) as gas precursor, various doping profiles were identified fitting the requirements for boron-doped emitters in n-type PERT solar cells. Particularly, saturation current density (J 0e ) of 50 fA/cm 2 were achieved on symmetrical samples for a 94 Ω/sg textured B-emitter passivated with SiO 2 /SiN stack. Bifacial n-type Passivated Emitter Rear Totally-diffused (n-PERT) solar cells were fabricated using the PIII technology and conversion efficiencies up to 19.8% on 239 cm 2 Cz-Si wafers were obtained. As a consequence, these results indicate that PIII can compete with beamline technology but will have lower running cost. It is therefore a promising technology to create high efficiency cSi solar cells. |
| Databáze: | OpenAIRE |
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