Low-temperature intracenter relaxation times of shallow donors in germanium
| Autor: | G. N. Kulipanov, R.Kh. Zhukavin, N. Deßmann, Harald Schneider, O. A. Shevchenko, Nikolay Vinokurov, K. A. Kovalevskii, N. V. Abrosimov, V. V. Tsyplenkov, Heinz-Wilhelm Hübers, V. V. Gerasimov, V.N. Shastin, Yu. Yu. Choporova, Sergey M. Sergeev, S.G. Pavlov, Boris A. Knyazev |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Solid-state physics terahertz pump-probe chemistry.chemical_element Germanium 02 engineering and technology Photon energy 01 natural sciences Molecular physics Stress (mechanics) Condensed Matter::Materials Science free-electron laser Antimony 0103 physical sciences FEL 010302 applied physics Low-Temperature Relaxation (NMR) 021001 nanoscience & nanotechnology germanium chemistry shallow impurities intracenter Relaxation 0210 nano-technology Excitation Bar (unit) |
| Zdroj: | JETP Letters 106(2017), 571-575 |
| ISSN: | 1090-6487 0021-3640 |
| DOI: | 10.1134/s0021364017210147 |
| Popis: | The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wavelength pump–probe setup using radiation from the Novosibirsk free electron laser (NovoFEL). The relaxation times in unstrained crystals depend on the temperature and excitation photon energy. Measurements in strained crystals are carried out under stress bar S > 300, in which case the ground-state wavefunction is formed by states belonging to a single valley in the germanium conduction band. It is shown that the application of uniaxial strain leads to an increase in the relaxation time, which is explained by a decrease in the number of relaxation channels. |
| Databáze: | OpenAIRE |
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