Retraction of 'Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures'
| Autor: | Byunggil Kang, Tuson Park, Changgu Lee, Hyobin Ahn, Muhammad Sabbtain Abbas, Soon-Gil Jung, Je-Geun Park, Yasir Hassan, Minwoong Joe, Yisehak Gebredingle, Pawan Kumar Srivastava, Kyung Jin Lee |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Condensed matter physics Spintronics Magnetism Mechanical Engineering Bilayer Bioengineering Heterojunction General Chemistry Condensed Matter Physics symbols.namesake Exchange bias Ferromagnetism symbols Antiferromagnetism Condensed Matter::Strongly Correlated Electrons General Materials Science van der Waals force |
| Zdroj: | Nano Letters. 20:6933-6933 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.0c02931 |
| Popis: | The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS4 allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices. |
| Databáze: | OpenAIRE |
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