III-V site-controlled quantum dots on Si patterned by nanoimprint lithography
| Autor: | S. Hussain, Massimo Tormen, Giorgio Biasiol, Valentina Zannier, Alessandro Pozzato |
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| Přispěvatelé: | Hussain, Sajid, Pozzato, A., Tormen, M., Zannier, Valentina, Biasiol, G. |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Nanostructure
Materials science Silicon Characterization molecuar beam epitaxy quantum dots semiconductors GaAs nanolithography chemistry.chemical_element quantum dots Nanotechnology semiconductors 02 engineering and technology 01 natural sciences Nanoimprint lithography law.invention Inorganic Chemistry Planar law 0103 physical sciences Materials Chemistry molecuar beam epitaxy nanolithography 010306 general physics business.industry GaAs Surface structure 021001 nanoscience & nanotechnology Condensed Matter Physics Nanostructures Semiconductor Nanolithography chemistry Semiconducting silicon Quantum dot Optoelectronics 0210 nano-technology business Molecular beam epitaxy Semiconducting III-V materials |
| Zdroj: | Journal of crystal growth 437 (2016): 59–62. doi:10.1016/j.jcrysgro.2015.03.056 info:cnr-pdr/source/autori:Hussain, S.; Pozzato, A.; Tormen, M.; Zannier, V.; Biasiol, G./titolo:III-V site-controlled quantum dots on Si patterned by nanoimprint lithography/doi:10.1016%2Fj.jcrysgro.2015.03.056/rivista:Journal of crystal growth/anno:2016/pagina_da:59/pagina_a:62/intervallo_pagine:59–62/volume:437 |
| DOI: | 10.1016/j.jcrysgro.2015.03.056 |
| Popis: | We have successfully grown regular arrays of InAs/GaAs quantum dots on patterned Si substrates. Thanks to the capability of nanoimprint lithography, we were able to obtain uniform patterns extended over some cm(2) areas, with periods of 300 nm. Ex-situ and in-situ treatments of the surface allowed us to completely remove any residual oxides prior to growth without the use of hydrogen beams, at temperatures compatible with standard III-V molecular beam epitaxy. The growth protocol was optimized in order to obtain a perfect selectivity of InAs/GaAs nanostructures in the holes, without any deposition on the planar areas. (C) 2015 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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