Sensitivity of secondary electron yields and SEM images to scattering parameters in MC simulations
| Autor: | Cornelis W. Hagen, Pieter Kruit, S. R. Lokhorst, T. Verduin |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Scanning electron microscope Line edge roughness 02 engineering and technology Surface finish Monte-Carlo simulation Inelastic scattering Mott scattering 01 natural sciences Molecular physics Secondary electrons Optics 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Phonon scattering Scattering business.industry Electron-matter interaction 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Biological small-angle scattering 0210 nano-technology business Secondary electron yield Scanning electron microscopy |
| Zdroj: | Microelectronic Engineering, 155 |
| ISSN: | 0167-9317 |
| Popis: | In the simulation of secondary electron yields (SEY) and secondary electron microscopy (SEM) images, there is always the question: "are we using the correct scattering cross-sections?". The three scattering processes of interest are quasi-elastic phonon scattering, elastic Mott scattering and inelastic scattering using the dielectric function model. We have artificially scaled the scattering cross-sections, such that the probability for events associated with a particular model is either increased or decreased. The influence of this adjustment on the calculated SEYs and simulated SEM images is then evaluated. At first we have investigated the influence on the calculated SEY of pure and infinitely thick silicon. We have observed that the influence of the acoustic phonon scattering cross-sections is seen all the way up to the incident primary electron energy of 10keV. We have extended the analysis to the simulation of SEM images of three dimensional rough lines of PMMA located on a silicon substrate. We conclude that the scaling of the scattering cross-sections affects the contrast of the SEM images, but not the roughness characterization of the lines, i.e. the 3ź of the line edge roughness (LER), correlation length and roughness exponent. Display Omitted We have performed a sensitivity analysis by scaling scattering cross-sections.Acoustic phonon scattering plays a significant role in the calculation of SEYs.Scaling of cross-sections affects SEM image contrast, but not LER characterization. |
| Databáze: | OpenAIRE |
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