Fabrication and centeracterization of ordered CuIn(1−x)Ga x Se2 nanopore films via template-based electrodeposition
| Autor: | Maojun Zheng, Li Ma, Tao Zhou, Ming‐ming Li, Wenzhong Shen, Changli Li |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Energy-dispersive X-ray spectroscopy chemistry.chemical_element Nanotechnology anodic aluminumoxide symbols.namesake Materials Science(all) General Materials Science CuIn(1−x)GaxSe2 Gallium Nano Express Anodizing nanopore films Condensed Matter Physics Copper indium gallium selenide solar cells 81.15.Pq 81.40.Ef Nanopore Chemical engineering chemistry electrodeposition symbols 81.05.Rm Water splitting annealing 82.45.Yz Raman spectroscopy Indium |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1556-276X |
| DOI: | 10.1186/1556-276x-7-675 |
| Popis: | Ordered CuIn(1−x)Ga x Se2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting. |
| Databáze: | OpenAIRE |
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