Circuit-level evaluation of a new zero-cost transistor in a embedded non-volatile memory CMOS technology

Autor: Arnaud Regnier, Stephan Niel, Alexandre Malherbe, Abderrezak Marzaki, Sebastien Haendler, Hassen Aziza, Franck Julien, Thomas Sardin, M. Mantelli, Philippe Lorenzini, Paul Devoge
Přispěvatelé: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Electronique pour Objets Connectés (EpOC), Université Côte d'Azur (UCA)-Polytech Nice-Sophia-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), STMicroelectronics [Rousset] (ST-ROUSSET), STMicroelectronics, Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Polytech Nice-Sophia-Université Côte d'Azur (UCA)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: 2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), Jun 2021, Montpellier, France. pp.1-5, ⟨10.1109/DTIS53253.2021.9505137⟩
DTIS
DOI: 10.1109/DTIS53253.2021.9505137⟩
Popis: International audience; This work presents a new transistor architecture developed by reusing already existing fabrication process steps in an embedded non-volatile memory (eNVM) CMOS technology. The proposed transistor is derived from an existing high-voltage transistor and is free in terms of photomasks and process steps, making it ideal for low-cost products. The new transistor is fabricated then electrically characterized, showing good analog performances. A SPICE (Simulation Program with Integrated Circuit Emphasis) model of the new device is developed to assess its circuit-level performances through electrical circuit simulation. The in-circuit performances of the new device are evaluated based on different ring oscillator circuits. A comparison with the existing high-voltage transistor is carried out considering performance parameters such as the oscillating frequency to demonstrate the appeal of our new transistor.
Databáze: OpenAIRE