Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics

Autor:	Tatsuya Kurose, Seiji Ishikawa, Mikael Östling, Carl-Mikael Zetterling, Takeshi Ohshima, Takahiro Makino, Shin-Ichiro Kuroki, Hiroshi Sezaki, Tomonori Maeda
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	010302 applied physics Materials science business.industry Mechanical Engineering 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Parasitic capacitance Mechanics of Materials 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics General Materials Science Electronics 0210 nano-technology business Hardware_LOGICDESIGN
Zdroj:	Materials Science Forum. 924:971-974
Popis:	Low-parasitic-capacitance 4H-SiC nMOSFETs using a novel self-aligned process were suggested and demonstrated. In these nMOSFETs, device characteristics including parasitic capacitances (gate-source, gate-drain, drain-source capacitance) were investigated and low parasitic capacitance was achieved by the self-aligned structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::905f1be3d419a8a2b330e1eb69d24c2e https://repo.qst.go.jp/records/49123 Zobrazit plný text záznamu