Toward Nanowire Electronics
| Autor: | Joachim Knoch, Walter Riess, Heinz Schmid, Mikael Björk, Joerg Appenzeller, Heike Riel |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering Nanowire Silicon on insulator Impact ionization MOSFET nanowire FET nanowire growth Schottky-barrier steep slope transistors tunnel FET VLS growth FIELD-EFFECT TRANSISTORS SILICON NANOWIRES QUANTUM-CAPACITANCE SI MOSFET N-MOSFET GATE PERFORMANCE DEVICES SOI SEMICONDUCTOR Engineering physics Nanoscience and Nanotechnology Electronic Optical and Magnetic Materials law.invention Quantum capacitance Nanoelectronics law Field-effect transistor Electronics Electrical and Electronic Engineering business |
| Zdroj: | Other Nanotechnology Publications |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2008.2008011 |
| Popis: | This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs. |
| Databáze: | OpenAIRE |
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