Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test
| Autor: | Z. Yu, Martin Marz, S. Letz, D. Zhao, Andreas Schletz |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Strain energy release rate Interconnection Materials science 020208 electrical & electronic engineering Extrapolation 02 engineering and technology Semiconductor device Temperature cycling Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Cohesive zone model 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Degradation (geology) Electrical and Electronic Engineering Composite material Thin film Safety Risk Reliability and Quality |
| Popis: | The thin film metallization, as a key structure of the semiconductor devices, realizes the bond-ability of the chips on circuit carriers and directly influences the electrical and mechanical reliability of the interconnection. In a previous study, a recently developed method, cross-sectional nanoindentations (CSN), has been utilized to characterize the adhesion strength degradation of the thin film metallization and its feasibility has been proved. In this paper, based on the now extended CSN test results from the previous study, a combined experimental and numerical approach with a cohesive zone model (CZM) is developed in order to evaluate the adhesion strength degradation of the thin film metallization quantitatively by means of the critical strain energy release rate Gc and therefore to obtain a measure with physical meaning and extrapolation ability. |
| Databáze: | OpenAIRE |
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