ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOPANT IN A FIELD-EFFECT HETEROTRANSISTORS

Autor:	Pankratov E.L, Bulaeva E.A
Rok vydání:	2015
Předmět:	Materials science Field-effect heterotransistor inhomogenous doping of channel decreasing of dimensions of transistor Condensed matter physics Dopant Field effect
Popis:	We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::903f582381486ef165613c751158293a https://zenodo.org/record/1473890 Zobrazit plný text záznamu