| Autor: |
Hoel, Virginie, Boret, Samuel, Grimbert, Bertrand, Aperce, Gilles, Bollaert, S., Happy, Henri, Wallart, Xavier, Cappy, A. |
| Jazyk: |
italština |
| Rok vydání: |
1999 |
| Předmět: |
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| Zdroj: |
Hoel, Virginie ; Boret, Samuel ; Grimbert, Bertrand ; Aperce, Gilles ; Bollaert, S. ; Happy, Henri ; Wallart, Xavier ; Cappy, A. (1999) 94-GHz low noise amplifier on InP in coplanar technology. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy. |
| Popis: |
High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T-gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids=350mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600mS/mm and an intrinsic current gain cutoff frequency Fc=220GHz. The extrinsic current gain cut-off frequency Ft is 175GHz. The LNA shows a minimum noise figure of 3.3dB with an associated gain of 11.5dB at 94GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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