Positive and negative chemical pressure effects investigated in electron-doped FeSe films with an electric-double-layer structure
| Autor: | Fuyuki Nabeshima, Naoki Shikama, A. Maeda, Yuki Sakishita |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Superconductivity
Materials science Condensed matter physics Condensed Matter - Superconductivity Electron doping Structure (category theory) FOS: Physical sciences Fermi energy Electron doped Gate voltage Superconductivity (cond-mat.supr-con) Condensed Matter::Materials Science Condensed Matter::Superconductivity Density of states Condensed Matter::Strongly Correlated Electrons |
| Popis: | We investigated chemical pressure effects in electron-doped (e-doped) FeSe by fabricating an electric-double-layer structure with single crystalline FeSe films on LaAlO$_3$ with Se substituted by isovalent Te and S. Our method enables transport measurements of e-doped FeSe. Electron doping by applying gate voltage of 5 V increases $T_{\mathrm c}$ of the FeSe$_{1-x}$Te$_x$ and FeSe$_{1-y}$S$_y$ films with $0 \leq x \leq 0.4$ and $0 \leq y \leq 0.25$, while the e-doped $x=0.5$ film showed lower $T_{\mathrm c}$ than that of the undoped one. Both positive and chemical pressure suppress $T_{\mathrm c}$ of the e-doped FeSe. The obtained superconducting phase diagram in the e-doped samples is rather different from that in undoped samples. This might suggest that the superconductivity mechanism is different between undoped and e-doped systems. Alternatively, this is possibly explained by the absence of the nematic order in e-doped samples. 15 pages, 4 figures |
| Databáze: | OpenAIRE |
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